Toshiba Corporation MG25Q6ES42 | 搜芯易Sourcengine

Toshiba Corporation MG25Q6ES42

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
4 V
JESD-30 Code
R-PUFM-D17
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
SOLDER LUG
Terminal Position
UPPER
Additional Feature
HIGH SPEED
Fall Time-Max (tf)
500 ns
Number of Elements
6
Number of Terminals
17
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
25 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED