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MG200Q1US51

Toshiba Corporation

Toshiba Corporation MG200Q1US51
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.29.00.95
  • SB Code
    8541.29.00.80
  • VCEsat-Max
    3.6 V
  • JESD-30 Code
    R-XUFM-X4
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT Meter
  • Surface Mount
    NO
  • Terminal Form
    UNSPECIFIED
  • Case Connection
    ISOLATED
  • Terminal Position
    UPPER
  • Additional Feature
    HIGH SPEED
  • Fall Time-Max (tf)
    300 ns
  • Number of Elements
    1
  • Number of Terminals
    4
  • Qualification Status
    Not Qualified
  • Package Body Material
    UNSPECIFIED
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Application
    MOTOR CONTROL
  • Gate-emitter Voltage-Max
    20 V
  • Operating Temperature-Max
    150 Cel
  • Collector Current-Max (IC)
    300 A
  • Power Dissipation-Max (Abs)
    1500 W
  • Transistor Element Material
    SILICON
  • Gate-emitter Thr Voltage-Max
    6 V
  • Collector-emitter Voltage-Max
    1200 V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Power Dissipation Ambient-Max
    1500 W
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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MG200Q1US51
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MG200Q1US51