Toshiba Corporation MG15N1BS1 | 搜芯易Sourcengine

Toshiba Corporation MG15N1BS1

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
R-PUFM-X3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
HIGH SPEED SWITCHING
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
400
Turn-off Time-Nom (toff) (ns)
1000
Collector Current-Max (IC) (A)
15
Collector-emitter Voltage-Max (V)
1000