Toshiba Corporation MG15J6ES40 | 搜芯易Sourcengine

Toshiba Corporation MG15J6ES40

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
3.5 V
JESD-30 Code
R-PUFM-D13
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
SOLDER LUG
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
Terminal Position
UPPER
Additional Feature
HIGH SPEED
Number of Elements
6
Number of Terminals
13
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
400 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
600 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
15 A
Power Dissipation-Max (Abs)
80 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V