Toshiba Corporation MG15G1AM1 | 搜芯易Sourcengine

Toshiba Corporation MG15G1AM1

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 15A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PUFM-D3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
SOLDER LUG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
15 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
450 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.4 ohm
Pulsed Drain Current-Max (IDM)
30 A