Toshiba Corporation MG100Q1JS9 | 搜芯易Sourcengine

Toshiba Corporation MG100Q1JS9

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PUFM-X7
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Additional Feature
CHOPPER SWITCH
Number of Elements
1
Number of Terminals
7
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Collector Current-Max (IC)
100 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V