Toshiba Corporation MG100J1ZS40 | 搜芯易Sourcengine

Toshiba Corporation MG100J1ZS40

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
3.5 V
JESD-30 Code
R-XUFM-X5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Additional Feature
HIGH SPEED
Fall Time-Max (tf)
350 ns
Number of Elements
1
Rise Time-Max (tr)
600 ns
Number of Terminals
5
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
100 A
Power Dissipation-Max (Abs)
400 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6 V
Collector-emitter Voltage-Max
600 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
400 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED