MFT60N12T22FS
Meritek Electronics Corp.
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 12A I(D), 600V, 0.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)12
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)600
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Power Dissipation Ambient-Max (W)42
- Drain-source On Resistance-Max (ohm)0.84
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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MFT60N12T22FS