Mitsubishi Electric Corp. MF116M-L57AT01 | 搜芯易Sourcengine

Mitsubishi Electric Corp. MF116M-L57AT01

生命周期状态
Discontinued
说明
DRAM Card, 4MX32, 70ns, MOS
类别
Semiconductors Memory ICs DRAMs DRAM CARD

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Technology
MOS
Access Mode
PAGE
JESD-30 Code
X-XXMA-X88
Memory Width
32
Organization
4MX32
Self Refresh
YES
Package Shape
UNSPECIFIED
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Memory Density
134217728 bit
Memory IC Type
DRAM CARD
Operating Mode
ASYNCHRONOUS
Refresh Cycles
2048
Access Time-Max
70 ns
Number of Ports
1
Number of Words
4194304 words
Temperature Grade
COMMERCIAL
Terminal Position
UNSPECIFIED
Additional Feature
RAS ONLY/CAS BEFORE RAS/SELF REFRESH
Number of Functions
1
Number of Terminals
88
Number of Words Code
4M
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Alternate Memory Width
16
Output Characteristics
3-STATE
Operating Temperature-Max
55 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
5.25 V
Supply Voltage-Min (Vsup)
4.75 V
Supply Voltage-Nom (Vsup)
5 V