MEMPHIS ELECTRONIC AG MEM2G04D2DABG-18 | 搜芯易Sourcengine

MEMPHIS ELECTRONIC AG MEM2G04D2DABG-18

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
DDR2 DRAM, 512MX4, 0.35ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B60
Memory Width
4
Organization
512MX4
Package Code
FBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
2147483648 bit
Memory IC Type
DDR2 DRAM
Refresh Cycles
8192
Terminal Pitch
0.8 mm
Access Time-Max
0.35 ns
Number of Words
536870912 words
Temperature Grade
OTHER
Terminal Position
BOTTOM
Supply Current-Max
210 mA
Number of Terminals
60
Standby Current-Max
0.012 Amp
Number of Words Code
512M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
4,8
Interleaved Burst Length
4,8
Package Equivalence Code
BGA60,9X11,32
Operating Temperature-Max
95 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
1.8 V
Clock Frequency-Max (fCLK)
533 MHz