MAGNACHIP SEMICONDUCTOR LTD MDF1933TH | 搜芯易Sourcengine

MAGNACHIP SEMICONDUCTOR LTD MDF1933TH

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 43A I(D), 80V, 0.0075ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
27.7
Drain Current-Max (ID) (A)
43
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
80
Feedback Cap-Max (Crss) (pF)
34.2
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
144.5
Pulsed Drain Current-Max (IDM) (A)
173
Drain-source On Resistance-Max (ohm)
0.0075
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED