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MD18R326GAG0-CM8

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. MD18R326GAG0-CM8
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.36
  • SB Code
    8542.32.00.23
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Access Mode
    BLOCK ORIENTED PROTOCOL
  • JESD-30 Code
    R-XDMA-N232
  • Memory Width
    36
  • Organization
    256MX36
  • Package Code
    DIMM
  • Self Refresh
    YES
  • Package Shape
    RECTANGULAR
  • Package Style
    MICROELECTRONIC ASSEMBLY Meter
  • Surface Mount
    NO
  • Terminal Form
    NO LEAD
  • Memory Density
    9663676416 bit
  • Memory IC Type
    RAMBUS DRAM MODULE
  • Operating Mode
    SYNCHRONOUS
  • Refresh Cycles
    32768
  • Terminal Pitch
    1 mm
  • Access Time-Max
    40 ns
  • Number of Ports
    1
  • Number of Words
    268435456 words
  • Temperature Grade
    COMMERCIAL
  • Terminal Position
    DUAL
  • Additional Feature
    SELF CONTAINED REFRESH
  • Supply Current-Max
    3350 mA
  • Number of Functions
    1
  • Number of Terminals
    232
  • Standby Current-Max
    1.496 Amp
  • Number of Words Code
    256M
  • Qualification Status
    Not Qualified
  • Package Body Material
    UNSPECIFIED
  • Output Characteristics
    3-STATE
  • Package Equivalence Code
    DIMM232,40
  • Operating Temperature-Max
    70 Cel
  • Operating Temperature-Min
    0 Cel
  • Supply Voltage-Max (Vsup)
    2.63 V
  • Supply Voltage-Min (Vsup)
    2.37 V
  • Supply Voltage-Nom (Vsup)
    2.5 V
  • Clock Frequency-Max (fCLK)
    400 MHz
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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MD18R326GAG0-CM8
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MD18R326GAG0-CM8