MD18R3268AG0-CN1
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Rambus DRAM Module, 128MX36, 32ns, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeBLOCK ORIENTED PROTOCOL
- JESD-30 CodeR-XDMA-N232
- Memory Width36
- Organization128MX36
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density4831838208 bit
- Memory IC TypeRAMBUS DRAM MODULE
- Operating ModeSYNCHRONOUS
- Refresh Cycles32768
- Terminal Pitch1 mm
- Access Time-Max32 ns
- Number of Ports1
- Number of Words134217728 words
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureSELF CONTAINED REFRESH
- Supply Current-Max2950 mA
- Number of Functions1
- Number of Terminals232
- Standby Current-Max1.944 Amp
- Number of Words Code128M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM232,40
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)2.63 V
- Supply Voltage-Min (Vsup)2.37 V
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)600 MHz
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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MD18R3268AG0-CN1