MCM63R818RS3.7
Motorola,Inc.
- 生命周期状态Discontinued
- 说明Late-Write SRAM, 256KX18, 1.85ns, CMOS, CBGA119
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- TechnologyCMOS
- JESD-30 CodeX-CBGA-B119
- Memory Width18
- Package CodeBGA
- Package ShapeUNSPECIFIED
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeLATE-WRITE SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Memory Organization256KX18
- Number of Functions1
- Number of Terminals119
- Access Time-Max (ns)1.85
- Number of Words Code256K
- Memory Density (bits)4718592
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)2.375
- Number of Words (words)262144
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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MCM63R818RS3.7