Motorola,Inc. MCM63R736RS3 | 搜芯易Sourcengine

Motorola,Inc. MCM63R736RS3

生命周期状态
Discontinued
说明
Late-Write SRAM, 128KX36, 1.5ns, CMOS, CBGA119
类别
Semiconductors Memory ICs SRAMs LATE-WRITE SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
JESD-30 Code
X-CBGA-B119
Memory Width
36
Package Code
BGA
Package Shape
UNSPECIFIED
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
LATE-WRITE SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
128KX36
Number of Functions
1
Number of Terminals
119
Access Time-Max (ns)
1.5
Number of Words Code
128K
Memory Density (bits)
4718592
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
2.375
Number of Words (words)
131072
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0