MCM5V4170BN80
Motorola,Inc.
- 生命周期状态Discontinued
- 说明Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-J40
- Memory Width16
- Organization256KX16
- Package CodeSOJ
- Self RefreshYES
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormJ BEND
- Memory Density4194304 bit
- Memory IC TypeFAST PAGE DRAM
- Refresh Cycles1024
- Terminal Pitch1.27 mm
- Access Time-Max80 ns
- Number of Words262144 words
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionDUAL
- Number of Terminals40
- Standby Current-Max0.0002 Amp
- Number of Words Code256K
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeSOJ40,.44
- Supply Voltage-Nom (Vsup)5 V
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MCM5V4170BN80