ONSEMI MCH4016-TL-H | 搜芯易Sourcengine

ONSEMI MCH4016-TL-H

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans RF BJT NPN 12V 0.03A 350mW 4-Pin MCPH T/R
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

JESD-30 Code
R-PDSO-F4
Configuration
SINGLE
JESD-609 Code
e6
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Finish
TIN BISMUTH
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
60
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.03 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
0.35 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
12 V
Peak Reflow Temperature (Cel)
260
Power Dissipation Ambient-Max
0.35 W
Transition Frequency-Nom (fT)
10000 MHz
Time@Peak Reflow Temperature-Max (s)
30