MCB85N06Y-TP-HF
Micro Commercial Components Corp.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明Power Field-Effect Transistor, 85A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)85
- Drain Current-Max (ID) (A)85
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Feedback Cap-Max (Crss) (pF)80
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)290
- Pulsed Drain Current-Max (IDM) (A)150
- Drain-source On Resistance-Max (ohm)0.013
- Time@Peak Reflow Temperature-Max (s)10
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MCB85N06Y-TP-HF