Hitachi, Ltd. MBN600E45A | 搜芯易Sourcengine

Hitachi, Ltd. MBN600E45A

生命周期状态
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说明
Insulated Gate Bipolar Transistor, 600A I(C), 4500V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Number of Elements
1
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
600 A
Collector-emitter Voltage-Max
4500 V