Hitachi, Ltd. MBN1800E17E | 搜芯易Sourcengine

Hitachi, Ltd. MBN1800E17E

生命周期状态
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说明
Insulated Gate Bipolar Transistor, 1800A I(C), 1700V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.8 V
Number of Elements
1
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
1800 A
Power Dissipation-Max (Abs)
8300 W
Collector-emitter Voltage-Max
1700 V