Hitachi, Ltd. MBN1200GS12AW | 搜芯易Sourcengine

Hitachi, Ltd. MBN1200GS12AW

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PUFM-X4
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
3.6
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Power Dissipation-Max (W)
5600
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
1200
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200