Hitachi, Ltd. MBN1200GR12A | 搜芯易Sourcengine

Hitachi, Ltd. MBN1200GR12A

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
S-XUFM-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
3
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
HIGH RELIABILITY, LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
8330
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
800
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
1400
Collector Current-Max (IC) (A)
1200
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200