Hitachi, Ltd. MBN1200F33F | 搜芯易Sourcengine

Hitachi, Ltd. MBN1200F33F

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Number of Elements
2
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
1200 A
Collector-emitter Voltage-Max
3300 V