Hitachi, Ltd. MBN1200E17D | 搜芯易Sourcengine

Hitachi, Ltd. MBN1200E17D

生命周期状态
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说明
Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
3.3 V
Number of Elements
1
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
1200 A
Collector-emitter Voltage-Max
1700 V