Renesas Technology Corp. MBN1200D33A | 搜芯易Sourcengine

Renesas Technology Corp. MBN1200D33A

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUFM-X9
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Additional Feature
HIGH RELIABILITY, LOW NOISE
Number of Elements
3
Number of Terminals
9
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
2300 ns
Turn-off Time-Nom (toff)
3900 ns
Collector Current-Max (IC)
1200 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
3300 V