MBM800E17F
Hitachi, Ltd.
- 生命周期状态Contact Mfr
- 说明Insulated Gate Bipolar Transistor, 800A I(C), 1700V V(BR)CES
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2 V
- Number of Elements2
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)800 A
- Collector-emitter Voltage-Max1700 V
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MBM800E17F