Hitachi, Ltd. MBM200GR6 | 搜芯易Sourcengine

Hitachi, Ltd. MBM200GR6

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X7
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.6
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
HIGH RELIABILITY, LOW NOISE
Number of Elements
2
Number of Terminals
7
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
690
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
300
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
550
Collector Current-Max (IC) (A)
200
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
600