Hitachi, Ltd. MBM200BS6 | 搜芯易Sourcengine

Hitachi, Ltd. MBM200BS6

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Additional Feature
HIGH SPEED, ULTRA SOFT FAST RECOVERY
Number of Elements
2
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
400
Collector Current-Max (IC) (A)
200
Collector-emitter Voltage-Max (V)
600