Hitachi, Ltd. MBL800D33B | 搜芯易Sourcengine

Hitachi, Ltd. MBL800D33B

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 800A I(C), 3300V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X9
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
5.2
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
HIGH RELIABILITY, LOW NOISE
Number of Elements
2
Number of Terminals
9
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
8000
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
2300
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
3300
Collector Current-Max (IC) (A)
800
Operating Temperature-Max (Cel)
125
Collector-emitter Voltage-Max (V)
3300