Renesas Technology Corp. MBL150GS6N | 搜芯易Sourcengine

Renesas Technology Corp. MBL150GS6N

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-X7
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
HIGH SPEED, ULTRA SOFT FAST RECOVERY
Number of Elements
1
Number of Terminals
7
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
300
Collector Current-Max (IC) (A)
150
Collector-emitter Voltage-Max (V)
600