MB81V18165A-60PJ
Fujitsu Semiconductor America, Inc.
- 生命周期状态Discontinued
- 说明EDO DRAM, 1MX16, 60ns, CMOS, PDSO42
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width10.16 mm
- Length27.3 mm
- TechnologyCMOS
- Access ModeFAST PAGE WITH EDO
- JESD-30 CodeR-PDSO-J42
- Memory Width16
- Organization1MX16
- Package CodeSOJ
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormJ BEND
- Memory Density16777216 bit
- Memory IC TypeEDO DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles1024
- Terminal Pitch1.27 mm
- Access Time-Max60 ns
- Number of Ports1
- Number of Words1048576 words
- Seated Height-Max3.75 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
- Number of Functions1
- Number of Terminals42
- Number of Words Code1M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
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