MB81ES171625-15WFKT
Fujitsu Limited
- 生命周期状态Transferred
- REACHREACH compliant
- 说明Synchronous DRAM, 1MX16, 12ns, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeDUAL BANK PAGE BURST
- JESD-30 CodeR-XUUC-N84
- Memory Width16
- Package CodeDIE
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- Memory IC TypeSYNCHRONOUS DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionUPPER
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization1MX16
- Number of Functions1
- Number of Terminals84
- Access Time-Max (ns)12
- Number of Words Code1M
- Memory Density (bits)16777216
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Supply Voltage-Max (V)1.95
- Supply Voltage-Min (V)1.65
- Supply Voltage-Nom (V)1.8
- Number of Words (words)1048576
- Sequential Burst Length1,2,4,8,FP
- Standby Current-Max (A)0.001
- Supply Current-Max (mA)73
- Interleaved Burst Length2,4,8
- Package Equivalence CodeWAFER
- Clock Frequency-Max (MHz)66.7
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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MB81ES171625-15WFKT