MB814100-10P
Fujitsu Semiconductor America, Inc.
- 生命周期状态Discontinued
- 说明Fast Page DRAM, 4MX1, 100ns, CMOS, PDIP18
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)7.62
- Access ModeFAST PAGE
- Length (mm)22.05
- JESD-30 CodeR-PDIP-T18
- Memory Width1
- Package CodeDIP
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Memory IC TypeFAST PAGE DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles1024
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
- Memory Organization4MX1
- Number of Functions1
- Number of Terminals18
- Terminal Pitch (mm)2.54
- Access Time-Max (ns)100
- Number of Words Code4M
- Memory Density (bits)4194304
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)5
- Supply Voltage-Max (V)5.5
- Supply Voltage-Min (V)4.5
- Supply Voltage-Nom (V)5
- Number of Words (words)4194304
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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MB814100-10P