MB81256-10PV
Fujitsu Semiconductor America, Inc.
- 生命周期状态Discontinued
- 说明Page Mode DRAM, 256KX1, 100ns, NMOS, PQCC18
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width7.24 mm
- Length12.45 mm
- TechnologyNMOS
- Access ModePAGE
- JESD-30 CodeR-PQCC-J18
- Memory Width1
- Organization256KX1
- Package CodeQCCJ
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormJ BEND
- Memory Density262144 bit
- Memory IC TypePAGE MODE DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles256
- Terminal Pitch1.27 mm
- Access Time-Max100 ns
- Number of Ports1
- Number of Words262144 words
- Seated Height-Max3.55 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionQUAD
- Additional FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
- Number of Functions1
- Number of Terminals18
- Number of Words Code256K
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)5.5 V
- Supply Voltage-Min (Vsup)4.5 V
- Supply Voltage-Nom (Vsup)5 V
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