MB811L646449-18WFKT
Fujitsu Semiconductor America, Inc.
- 生命周期状态Discontinued
- 说明Synchronous DRAM, 2MX32, 9ns, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- TechnologyCMOS
- Access ModeDUAL BANK PAGE BURST
- JESD-30 CodeR-XUUC-N176
- Memory Width32
- Organization2MX32
- Package CodeDIE
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- Memory Density67108864 bit
- Memory IC TypeSYNCHRONOUS DRAM
- Operating ModeSYNCHRONOUS
- Access Time-Max9 ns
- Number of Ports1
- Number of Words2097152 words
- Temperature GradeCOMMERCIAL
- Terminal PositionUPPER
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals176
- Number of Words Code2M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)2.7 V
- Supply Voltage-Min (Vsup)2.3 V
- Supply Voltage-Nom (Vsup)2.5 V
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MB811L646449-18WFKT