MB811L646449-18
Fujitsu Semiconductor America, Inc.
- 生命周期状态Discontinued
- 说明Synchronous DRAM, 2MX32, 9ns, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- TechnologyCMOS
- Access ModeDUAL BANK PAGE BURST
- JESD-30 CodeR-XUUC-N156
- Memory Width32
- Package CodeDIE
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- Memory IC TypeSYNCHRONOUS DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionUPPER
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization2MX32
- Number of Functions1
- Number of Terminals156
- Access Time-Max (ns)9
- Number of Words Code2M
- Memory Density (bits)67108864
- Package Body MaterialUNSPECIFIED
- Supply Voltage-Max (V)2.7
- Supply Voltage-Min (V)2.3
- Supply Voltage-Nom (V)2.5
- Number of Words (words)2097152
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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MB811L646449-18