Fujitsu Limited MB811L323229-12WFKT | 搜芯易Sourcengine

Fujitsu Limited MB811L323229-12WFKT

生命周期状态
Discontinued
REACH
REACH compliant
说明
Synchronous DRAM, 1MX32, 9ns, CMOS
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Access Mode
DUAL BANK PAGE BURST
JESD-30 Code
R-XUUC-N88
Memory Width
32
Organization
1MX32
Package Code
DIE
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
Memory Density
33554432 bit
Memory IC Type
SYNCHRONOUS DRAM
Operating Mode
SYNCHRONOUS
Access Time-Max
9 ns
Number of Ports
1
Number of Words
1048576 words
Temperature Grade
COMMERCIAL
Terminal Position
UPPER
Additional Feature
AUTO/SELF REFRESH
Supply Current-Max
143 mA
Number of Functions
1
Number of Terminals
88
Standby Current-Max
0.001 Amp
Number of Words Code
1M
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Sequential Burst Length
1,2,4,8,FP
Interleaved Burst Length
2,4,8
Package Equivalence Code
WAFER
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Clock Frequency-Max (fCLK)
83.3 MHz
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED