M6MGB64BS8BWG
Renesas Technology Corp.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明Memory Circuit, 4MX16, CMOS, PBGA67
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.71
- SB Code8542.32.00.70
- Width8.5 mm
- Length10.8 mm
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B67
- Memory Width16
- Organization4MX16
- Package CodeFBGA
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density67108864 bit
- Memory IC TypeMEMORY CIRCUIT
- Operating ModeASYNCHRONOUS
- Terminal Pitch0.8 mm
- Number of Words4194304 words
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureSRAM IS ORGANIZED AS 512K X 16
- Number of Functions1
- Number of Terminals67
- Number of Words Code4M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)3 V
- Supply Voltage-Min (Vsup)2.7 V
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)20
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M6MGB64BS8BWG