M6MGB166S2BWG-90
Mitsubishi Electric Corp.
- 生命周期状态Discontinued
- 说明Memory Circuit, 1MX16, CMOS, PBGA72
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.71
- SB Code8542.32.00.70
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B72
- Memory Width16
- Organization1MX16
- Package CodeBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density16777216 bit
- Memory IC TypeMEMORY CIRCUIT
- Operating ModeASYNCHRONOUS
- Number of Words1048576 words
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureCOMBINATION OF 3.3V FLASH MEM & SRAM IN -CSP; ACCESS TIME FOR FLASH MEM IS 90NS & FOR SRAM 85 NS
- Number of Functions1
- Number of Terminals72
- Number of Words Code1M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-20 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)2.7 V
- Supply Voltage-Nom (Vsup)3.3 V
M6MGB166S2BWG-90有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
M6MGB166S2BWG-90