M5M4V4169TP-20T
Mitsubishi Electric Corp.
- 生命周期状态Discontinued
- 说明Cache DRAM, 256KX16, CMOS, PDSO68
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width10.16 mm
- Length23.49 mm
- TechnologyCMOS
- Access ModePAGE
- JESD-30 CodeR-PDSO-G68
- Memory Width16
- Organization256KX16
- Package CodeTSOP2
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density4194304 bit
- Memory IC TypeCACHE DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles1024
- Terminal Pitch0.65 mm
- Number of Ports1
- Number of Words262144 words
- Seated Height-Max1.2 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals68
- Number of Words Code256K
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
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