Mitsubishi Electric Corp. M5M4V16409ATP-10 | 搜芯易Sourcengine

Mitsubishi Electric Corp. M5M4V16409ATP-10

生命周期状态
Discontinued
说明
Cache DRAM, 4MX4, 60ns, CMOS, PDSO62
类别
Semiconductors Memory ICs DRAMs CACHE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON/SEPARATE
Technology
CMOS
Access Mode
PAGE
JESD-30 Code
R-PDSO-G62
Memory Width
4
Organization
4MX4
Package Code
SOP
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
16777216 bit
Memory IC Type
CACHE DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
4096
Access Time-Max
60 ns
Number of Ports
1
Number of Words
4194304 words
Terminal Finish
TIN LEAD
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
AUTO REFRESH; 4096 X 4 SRAM
Number of Functions
1
Number of Terminals
62
Number of Words Code
4M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
TSOP62(UNSPEC)
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V