M5M4V16169TP-20
Mitsubishi Electric Corp.
- 生命周期状态Discontinued
- 说明Cache DRAM, 1MX16, 70ns, CMOS, PDSO68
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width10.16 mm
- Length23.49 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModePAGE
- JESD-30 CodeR-PDSO-G68
- Memory Width16
- Organization1MX16
- Package CodeTSOP2
- Self RefreshYES
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density16777216 bit
- Memory IC TypeCACHE DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles4096
- Terminal Pitch0.65 mm
- Access Time-Max70 ns
- Number of Ports1
- Number of Words1048576 words
- Terminal FinishTin/Lead (Sn/Pb)
- Seated Height-Max1.2 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH; 1024 X 16 SRAM
- Supply Current-Max260 mA
- Number of Functions1
- Number of Terminals68
- Standby Current-Max0.005 Amp
- Number of Words Code1M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeTSSOP68/70,.46
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
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