Mitsubishi Electric Corp. M5M44409TP-20 | 搜芯易Sourcengine

Mitsubishi Electric Corp. M5M44409TP-20

生命周期状态
Discontinued
说明
Cache DRAM, 1MX4, 80ns, CMOS, PDSO44
类别
Semiconductors Memory ICs DRAMs CACHE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON/SEPARATE
Technology
CMOS
JESD-30 Code
R-PDSO-G44
Memory Width
4
Organization
1MX4
Package Code
TSOP
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
34603008 bit
Memory IC Type
CACHE DRAM
Access Time-Max
80 ns
Number of Words
1048576 words
Terminal Finish
Tin/Lead (Sn/Pb)
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Supply Current-Max
110 mA
Number of Terminals
44
Standby Current-Max
0.0001 Amp
Number of Words Code
1M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
TSOP44(UNSPEC)
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
5 V