Mitsubishi Electric Corp. M5M44268BJ-10T | 搜芯易Sourcengine

Mitsubishi Electric Corp. M5M44268BJ-10T

生命周期状态
Discontinued
说明
Static Column DRAM, 256KX4, 100ns, CMOS, PDSO20
类别
Semiconductors Memory ICs DRAMs STATIC COLUMN DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Width
7.62 mm
Length
17.15 mm
Technology
CMOS
Access Mode
STATIC COLUMN
JESD-30 Code
R-PDSO-J20
Memory Width
4
Organization
256KX4
Package Code
SOJ
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J BEND
Memory Density
1048576 bit
Memory IC Type
STATIC COLUMN DRAM
Operating Mode
ASYNCHRONOUS
Refresh Cycles
512
Terminal Pitch
1.27 mm
Access Time-Max
100 ns
Number of Ports
1
Number of Words
262144 words
Seated Height-Max
3.55 mm
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Number of Functions
1
Number of Terminals
20
Number of Words Code
256K
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Supply Voltage-Nom (Vsup)
5 V