Mitsubishi Electric Corp. M5M411664ATP-6S | 搜芯易Sourcengine

Mitsubishi Electric Corp. M5M411664ATP-6S

生命周期状态
Discontinued
说明
Fast Page DRAM, 64KX16, 60ns, CMOS, PDSO40
类别
Semiconductors Memory ICs DRAMs FAST PAGE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDSO-G40
Memory Width
16
Organization
64KX16
Package Code
TSOP
Self Refresh
YES
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
1048576 bit
Memory IC Type
FAST PAGE DRAM
Refresh Cycles
256
Terminal Pitch
0.8 mm
Access Time-Max
60 ns
Number of Words
65536 words
Terminal Finish
Tin/Lead (Sn/Pb)
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Supply Current-Max
110 mA
Number of Terminals
40
Standby Current-Max
0.0001 Amp
Number of Words Code
64K
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
TSOP40/44,.46,32
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
5 V