M55D4G32128A-GFBG2R
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明LPDDR3 DRAM, 128MX32, CMOS, PBGA178
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)11
- Access ModeMULTI BANK PAGE BURST
- Length (mm)11.5
- JESD-30 CodeR-PBGA-B178
- Memory Width32
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeLPDDR3 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY VOLTAGE, TERM PITCH-MAX
- Memory Organization128MX32
- Number of Functions1
- Number of Terminals178
- Terminal Pitch (mm)0.8
- Number of Words Code128M
- Memory Density (bits)4294967296
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)1.3
- Supply Voltage-Min (V)1.14
- Supply Voltage-Nom (V)1.2
- Number of Words (words)134217728
- Sequential Burst Length8
- Standby Current-Max (A)0.04
- Supply Current-Max (mA)17
- Interleaved Burst Length8
- Package Equivalence CodeBGA178,13X17,32/25
- Clock Frequency-Max (MHz)1066
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-25
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M55D4G32128A-GFBG2R