M55D1G3232A-GFBG2Y
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- 生命周期状态Contact Mfr
- RoHS符合RoHS标准
- 说明4M x 32 Bit x 8 Banks LPDDR3 SDRAM
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)11
- Access ModeMULTI BANK PAGE BURST
- Length (mm)11.5
- JESD-30 CodeR-PBGA-B178
- Memory Width32
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeLPDDR3 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles4096
- Number of Ports1
- Terminal PositionBOTTOM
- Memory Organization32MX32
- Number of Functions1
- Number of Terminals178
- Terminal Pitch (mm)0.8
- Number of Words Code32M
- Memory Density (bits)1073741824
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)1.95
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)33554432
- Sequential Burst Length8
- Standby Current-Max (A)5.0E-5
- Supply Current-Max (mA)215
- Interleaved Burst Length8
- Package Equivalence CodeBGA178,13X17,32/25
- Clock Frequency-Max (MHz)1066
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-25
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