M53D1G1664A-7.5BG
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明DDR1 DRAM, 64MX16, 6ns, CMOS, PBGA60
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)8
- Access ModeFOUR BANK PAGE BURST
- Length (mm)13
- JESD-30 CodeR-PBGA-B60
- Memory Width16
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR1 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization64MX16
- Number of Functions1
- Number of Terminals60
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)6
- Number of Words Code64M
- Memory Density (bits)1073741824
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)1.95
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)67108864
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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M53D1G1664A-7.5BG