M53D128168A-7.5BG2E
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- 生命周期状态Contact Mfr
- RoHS符合RoHS标准
- 说明DDR1 DRAM, 8MX16, 6ns, CMOS, PBGA60
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width8 mm
- Length13 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-PBGA-B60
- Memory Width16
- Organization8MX16
- Package CodeVBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density134217728 bit
- Memory IC TypeDDR1 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles4096
- Reverse PinoutNO
- Terminal Pitch1 mm
- Access Time-Max6 ns
- Number of Ports1
- Number of Words8388608 words
- Seated Height-Max1 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals60
- Standby Voltage-Min1.7 V
- Number of Words Code8M
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length2,4,8,16
- Interleaved Burst Length2,4,8,16
- Package Equivalence CodeBGA60,6X12,40/32
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.95 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)133 MHz
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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