M52S16161A-10BG
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明Synchronous DRAM, 1MX16, 9ns, CMOS, PBGA60
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)6.4
- Access ModeDUAL BANK PAGE BURST
- Length (mm)10.1
- JESD-30 CodeR-PBGA-B60
- Memory Width16
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeSYNCHRONOUS DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization1MX16
- Number of Functions1
- Number of Terminals60
- Terminal Pitch (mm)0.65
- Access Time-Max (ns)9
- Number of Words Code1M
- Memory Density (bits)16777216
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)2.7
- Supply Voltage-Min (V)2.3
- Supply Voltage-Nom (V)2.5
- Number of Words (words)1048576
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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M52S16161A-10BG